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| CXG1174UR High Power SP3T Switch with Logic Control Description This IC can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. Features * Low insertion loss: 0.3dB@1.95GHz, 0.35dB@2.14GHz * 2 CMOS compatible control line * Small package size: 12-pin UQFN Applications Antenna switch for cellular handsets W-CDMA Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25C) * Bias voltage VDD 7 V * Control voltage Vctl 5 V * Operation temperature Topr -35 to +85 C * Storage temperature Tstg -65 to +150 C 12 pin UQFN (Plastic) GaAs MMIC's are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E03Y27-PS CXG1174UR Block Diagram and Recommended Circuit CRF GND RF2 RF3 CRF 6 GND 7 F1 CRF RF1 8 5 F2 4 GND 3 F3 2 RF4 CRF GND 9 10 VDD GND 1 11 CTLA 12 CTLB Cbypass (100pF) Cbypass (100pF) Cbypass (100pF) Rctl (1k) Rctl (1k) When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1k is recommended. CRF: This capacitor is used for RF De-coupling and must be used all application. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. Truth Table State CTLA CTLB 1 2 3 H L H/L H H L ON State RF1 - RF2 RF1 - RF3 RF1 - RF4 F1 ON OFF F2 ON F3 OFF ON F4 ON ON F5 ON OFF ON F6 ON ON OFF OFF OFF OFF OFF OFF -2- CXG1174UR Block Diagram F1 RF1 F4 RF2 F2 RF3 F5 F3 RF4 F6 -3- CXG1174UR DC Bias Condition Item Vctl (H) Vctl (L) VDD Min. 2.0 0 2.5 Typ. 2.85 -- 2.85 (Ta = 25C) Max. 3.6 0.4 3.6 Unit V V V Electrical Characteristics Item Symbol State 1 Insertion loss IL 2 3 2, 3 Isolation VSWR Switching speed ACLR Harmonics Bias current Control current ISO. VSWR TSW ACLR1 ACLR2 2fo 3fo IDD Ictl VDD = 2.85V Vctl (H) = 2.85V 5MHz 10MHz 1 1 1 1 1, 3 1, 2 Condition RF1 - RF2, 1920 to 1980MHz 2110 to 2170MHz RF1 - RF3, 1920 to 1980MHz 2110 to 2170MHz RF1 - RF4, 1920 to 1980MHz 2110 to 2170MHz RF1 - RF2, 1920 to 2170MHz RF1 - RF3, 1920 to 2170MHz RF1 - RF4, 1920 to 2170MHz 50 20 20 20 Min. Typ. 0.30 0.35 0.30 0.35 0.30 0.35 30 30 30 1.2 5 -60 -65 -70 -70 0.07 14 (Ta = 25C) Max. 0.55 0.60 0.55 0.60 0.55 0.60 Unit dB dB dB dB dB dB dB dB dB 1.5 10 -50 -55 -55 -55 0.15 25 -- s dBc dBc dBc dBc mA A 1 Pin = 25dBm, 0/2.85V control, VDD = 2.85V, 1920 to 1980MHz -4- CXG1174UR Pin Description Pin No. 2 4 6 8 10 11 12 1, 3, 5, 7, 9 Symbol RF4 RF3 RF2 RF1 VDD CTLA CTLB GND Description RF input/output. Connect capacitor (recommended value: 100pF) in use RF input/output. Connect capacitor (recommended value: 100pF) in use RF input/output. Connect capacitor (recommended value: 100pF) in use RF input/output. Connect capacitor (recommended value: 100pF) in use DC power supply Logic control Logic control GND -5- CXG1174UR Package Outline Unit: mm 12PIN UQFN PLASTIC x4 0.1 S A-B C 2.0 0.55 0.05 0.4 0.1 0.6 4-R0.2 C B 9 10 7 6 2.0 A 12 1 3 4 0.4 PIN 1 INDEX 0.18 0.07 0.25 0.05 M S A-B C 0.14 0.05 S S MAX0.02 Solder Plating + 0.09 0.14 - 0.03 + 0.09 0.25 - 0.03 S TERMINAL SECTION Note:Cutting burr of lead are 0.05mm MAX. SONY CODE EIAJ CODE JEDEC CODE UQFN-12P-01 PACKAGE STRUCTURE PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.01g LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18m -6- Sony Corporation |
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